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General Properties of Silicon

Property Value
Atomic Density 5 x 1022 cm-3
5 x 1028 m-3
Atomic Weight 28.09
Density (ρ) 2.328 g cm-3
2328 kg m-3
Energy Bandgap (EG) 1.1242 eV
Intrinsic Carrier Concentration (ni) at 300K* 1 x 1010 cm-3
1 x 1016 m-3
Intrinsic Carrier Concentration (ni) at 25°C* 8.6 x 109 cm-3
8.6 x 1015 m-3
Lattice Constant 0.543095 nm
Melting Point 1415 °C
Thermal Conductivity 1.5 Wcm-1K-1
150 Wm-1K-1
Thermal Expansion Coefficient 2.6 x 10-6 K-1
Effective Density of States in the Conduction Band (NC) 3 x 1019 cm-3
3 x 1025 m-3
Effective Density of States in the Valence Band (NV) 1 x 1019 cm-3
1 x 1025 m-3
Relative Permittivity (εr) 11.7
Electron Affinity 4.05 eV
Electron Diffusion Coefficient (De) kT/q µe
Hole Diffusion Coefficient (Dh) kT/q µh

* updated values given in [Sproul1990] [Sproul1991].

Properties of Silicon as a Function of Doping (300 K)

Section titled “Properties of Silicon as a Function of Doping (300 K)”

Carrier mobility is a function of carrier type and doping level. The values calculated here use the same formula as PC1D to fit values given in [Wang1990] and [Thurber1980boron][Thurber1980phos] [Thurber1981]. Lifetime as a function of doping is given on bulk lifetime.

Doping Level: cm-3
Electron mobility (µe) Diffusivity (De)
Majority carrier: cm2V-1s-1
Minority carrier: cm2V-1s-1		 cm2s-1
cm2s-1
Hole Mobility (µh) Diffusivity (Dh)
Majority carrier: cm2V-1s-1
Minority carrier: cm2V-1s-1		 cm2s-1
cm2s-1
Approx. Resistivity (for doping > 1012)
n-type: ohm cm
p-type: ohm cm

References

Section titled “References”
  1. A.B. Sproul, M. Green and J. Zhao, “Improved value for the silicon intrinsic carrier concentration at 300 K,” Applied Physics Letters, vol. 57, pp. 255, 1990. https://doi.org/10.1063/1.103707
  2. A.B. Sproul and M. Green, “Improved value for the silicon intrinsic carrier concentration from 275 to 375 K,” Journal of Applied Physics, vol. 70, pp. 846-854, 1991. https://doi.org/10.1063/1.349645
  3. C.H. Wang, K. Misiakos and A. Neugroschel, “Minority-carrier transport parameters in n-type silicon,” IEEE Transactions on Electron Devices, vol. 37, pp. 1314 - 1322, 1990. https://doi.org/10.1109/16.108194
  4. W. Thurber et al., “Resistivity-Dopant Density Relationship for Boron-Doped Silicon,” Journal of The Electrochemical Society, vol. 127, pp. 2291-2294, 1980. https://doi.org/10.1149/1.2129394
  5. W. Thurber et al., “Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,” Journal of The Electrochemical Society, vol. 127, pp. 1807-1812, 1980. https://doi.org/10.1149/1.2130006
  6. W. Thurber et al., “The Relationship Between Resistivity and Dopant Density for Phosphorus- and Boron-Doped Silicon,” 1981.